Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Conduction mechanisms, molecular modelling and micro-Raman studies of TlInSe2 chalcogenide crystal



  1. Istanbul University, Science Faculty, Physics Department, 34134, Istanbul, Turkey
  2. Istanbul University, Engineering Faculty, Electrical and Electronics Engineering Department, 34320, Istanbul, Turkey
  3. Yildiz Technical University, Faculty of Arts and Science, Physics Department, 34349, Istanbul, Turkey


The temperature dependence of the electrical conductivity of the sample was studied for temperatures between 120 and 330 Kelvin. The DC measurements suggest that the electrical transport is governed by space charge limited conduction mechanism in the temperature range (210-330 K) and the related parameters, such as trap density, activation energy were calculated. The ac conductivity of the studied sample was investigated in the frequency range 10 Hz-20MHz and temperature range 173-373 K. The temperature dependence of both the ac conductivity and the frequency exponent, s is reasonably well interpreted in terms of the correlated barrier hopping model. Molecular Mechanics calculations with universal force field were performed on the TlIn4Se16 cluster that represent the local structure of the investigated crystal. The optimal geometries and the vibrational properties of the investigated cluster were calculated using universal force field method..


Space charge limited conduction, ternary crystals, TlInSe2 , micro-Raman spectroscopy, correlated barrier hopping.

Submitted at: May 17, 2016
Accepted at: April 6, 2017


NEVIN KALKAN, SEFA CELIK, HANIFE BAS, AYSEN E. OZEL, Conduction mechanisms, molecular modelling and micro-Raman studies of TlInSe2 chalcogenide crystal, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 3-4, pp. 234-245 (2017)