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I agree, do not show this message again.Controllability study of crystallization on whole visible-transparent chalcogenide glasses of GeS2-Ga2S3-CsCl system
C. LIN1,2, L. CALVEZ2, B. BUREAU2, Y. LEDEMI2, Y. XU2, H. TAO1, X. ZHANG2, X. ZHAO1
Affiliation
- Key Laboratory of Silicate Materials Science and Engineering (Wuhan University of Technology), Ministry of Education, Wuhan, Hubei 430070, PR China
- Laboratoire des Verres et Céramiques, UMR-CNRS 6226, Sciences chimiques de Rennes, Université de Rennes 1, 35042 Rennes Cedex, France
Abstract
Phase transformation and nucleation-rate-like curve were firstly determined in chalcogenide glasses based on GeS2-Ga2S3-CsCl system, offering a controlled way to the transparent glass-ceramics with designed-in crystal phases and desired microstructure. The whole visible transparent glass of a composition of 25GeS2·35Ga2S3·40CsCl was specified for a demonstration of the controlled crystallization. The expected crystal phases (Ga2S3 crystals) with a very fine size of ~50 nm were achieved successfully, more impressively with a large crystallinity degree of > 80%. An IR-transmitting glass-ceramic with the well improved resistance to the environmental impact was also obtained after a heat-treatment at 350 o C for 30h. And the nonlinear evolution of the thermo-mechanical properties for the resultant glass-ceramics is elucidated by the structural investigation employing SEM, XRD, and NMR techniques. The corresponding results would have benefit for the optimization of designing transparent chalcogenide glass-ceramics with highly specialized properties for many potential new applications in IR spectral region..
Keywords
Mechanical Properties, Crystallization, Phase Transformations, Chalcogenide glasses, Nucleation rate.
Submitted at: June 6, 2010
Accepted at: Aug. 12, 2010
Citation
C. LIN, L. CALVEZ, B. BUREAU, Y. LEDEMI, Y. XU, H. TAO, X. ZHANG, X. ZHAO, Controllability study of crystallization on whole visible-transparent chalcogenide glasses of GeS2-Ga2S3-CsCl system, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 8, pp. 1684-1691 (2010)
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