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Current- and capacitance- voltage analysis as a function of temperature in Au/GaN Schottky diodes

M. A. BENAMARA1,* , A.TALBI1, B. AKKAL1, Z. BENAMARA1, A. BABA AHMED2, B. GRUZZA3, C. ROBERTGOUMET3

Affiliation

  1. Laboratoire de Micro-électronique Appliquée. Université DjillaliLiabès de Sidi Bel Abbès. 22000- Sidi Bel Abbès. Algeria
  2. Département de Médecine Faculté de Médecine de Tlemcen, Université de Tlemcen-13000-Tlemcen. Algeria
  3. Laboratoire des Sciences des Matériaux pour l’Electronique et d’Automatique, Université Blaise Pascal de Clermont II. Les Cézeaux 63177. Aubière. France

Abstract

Current-voltage and capacitance-voltage characteristics of Au/n-GaNSchottky diode have been measured over the temperature range from 80 to 300°K. I(V) analysis versus different temperatures gives the saturation current variation Is (2.96×10-29 A - 1.91×10-11 A), the mean ideality factor (1.85 - 1.18), the barrier height (0.48 V - 0.86 V), and finally the serial resistance Rs variations (1050 Ω - 65 Ω). The doping concentration Nd and the diffusion voltage Vd are calculated using the C(V) characteristics. The concentration Nd is evaluated to 4.14×1016 cm-3 at 125 °K and increases with the thermal activation to 8.32×1016 cm-3at 300 K. Nevertheless, the diffusion voltage Vd is reversibly proportional to the doping concentration Nd and decreases from 0.75 V to 0.56 V. The mean interfacial state density Nssdecreases with the temperature increasing, from 4.6×1012 cm-2 eV-1 to 1.9×1012 cm-2.eV-1. This improvement is the result of the molecular restructuring and the reordering at the Au/GaN interface..

Keywords

Schottky diodes, Au/n─GaN, Interfacial State density, Barrier height.

Submitted at: April 17, 2013
Accepted at: June 12, 2013

Citation

M. A. BENAMARA, A.TALBI, B. AKKAL, Z. BENAMARA, A. BABA AHMED, B. GRUZZA, C. ROBERTGOUMET, Current- and capacitance- voltage analysis as a function of temperature in Au/GaN Schottky diodes, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 5-6, pp. 417-420 (2013)