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DC conduction mechanism in vanadium doped ZnTe thin films

M. S. HOSSAIN1,* , R. ISLAM2, K. A. KHAN2

Affiliation

  1. Department of Physics, Rajshahi University of Engineering and Technology (RUET), Rajshahi-6204, Bangladesh
  2. Department of Applied Physics & Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh

Abstract

Vanadium doped zinc telluride (ZnTe:V) thin films (containing 2.5 to 10wt% V in ZnTe matrix) and its sandwich structures of thickness 100 to 200 nm were prepared onto glass substrate by e-beam evaporation technique in vacuum at a pressure of 8×10-4 Pa. The deposition rate of the films was 2.05 nms-1. X-ray diffraction technique exhibits that the thin films are mixed crystalline in nature. Surface morphological studies were carried out by using SEM technique. This study indicates that the surface of ZnTe:V thin films are dense, smooth and have a compact in structure. EDAX method was used to analyze the compositions of ZnTe:V thin films. The elemental compositions of ZnTe:V films are found to follow the non-stoichiometric in nature. The dc conduction mechanism of Al/ZnTe:V/Al sandwich structure was studied in detail in the temperature range of 303 to 393 K under dc electric field of 6.67×105 to 3.33×108 Vm-1. The dc conduction mechanism is found to obey ohmic behavior in the low field region and a modified Poole-Frenkel behavior is found to exhibit in the high field region. This study of ZnTe:V films may help in view of their technological applications in optoelectronic devices..

Keywords

ZnTe:V thin films, E-beam technique, Sandwich structure, SEM, EDAX.

Submitted at: Feb. 18, 2010
Accepted at: June 16, 2010

Citation

M. S. HOSSAIN, R. ISLAM, K. A. KHAN, DC conduction mechanism in vanadium doped ZnTe thin films, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 6, pp. 1333-1337 (2010)