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DC conductivity measurements of (As 2S3) 1-x (AgI) x thin films♣

K.KOLEV1,* , T.PETKOVA1, P.PETKOV2, Y.NEDEVA2

Affiliation

  1. Institute of Electrochemistry and Energy Systems, BAS,1113 Sofia, Bulgaria
  2. Laboratory of thin film technology, Department of Physics, U niversity of Chemical Technology & Metallurgy,1756 Sofia, Bulgaria

Abstract

Thin films from the (As2S 3) 1–x (AgI) x system have been prepared by vacuum thermal evaporation from the corresponding bulk glasses. Films with less than 25 mol % of AgI are amorphous, as shown by XRD investigations. The thin film morphology and surface have been investigated with SEM and AFM. Sandwich systems consisting of a deposited bottom electrode, a chalcogenide film and an upper electrode have been utilized for electrical studies. The DC conductivity has been measured in a linearly increasing electrical field up to 10 8 Vm-1, at ambient temperature. The obtained results have been interpreted with a view of Christov’s theory for injected electron currents..

Keywords

Chalcogenides, Thin films, Electrical properties.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

K.KOLEV, T.PETKOVA, P.PETKOV, Y.NEDEVA, DC conductivity measurements of (As 2S3) 1-x (AgI) x thin films♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1244-1248 (2009)