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Dependence of the photoluminescence intensity of Tb3+ ions in thin films on the deposition conditions♣

M. SENDOVA-VASSILEVA1,* , D. DIMOVA-MALINOVSKA1, O. ANGELOV1, J. C. PIVIN2

Affiliation

  1. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. CSNSM, CNRS, Bâtiment 108, 91405 Orsay Campus, France

Abstract

This paper presents results on the deposition and characterization of thin silica and alumina films containing Tb3+ ions, prepared by magnetron co-sputtering. The films are intended for applications as spectral converters of the solar spectrum in thin film silicon solar cells. The dependence of the photoluminescence intensity in the films on the deposition parameters and position on the substrate is studied, in order to assess the suitability of this method of preparation for the stated purpose, and to optimize the deposition conditions. At a distance of 7.5 cm between the target and the growing film, strong dependence of the photoluminescence (PL) intensity and film thickness on the substrate radial position is observed. The increased PL intensity over the erosion zone is explained by bombardment of the growing film by particles from the plasma, which causes a better dispersion of Tb ions and less clustering. However, greater distances between the target and substrates should be used for achieving a homogeneous PL intensity and thickness..

Keywords

Rare earth ions, Photoluminescence, Solar cells, Spectral converters.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

M. SENDOVA-VASSILEVA, D. DIMOVA-MALINOVSKA, O. ANGELOV, J. C. PIVIN, Dependence of the photoluminescence intensity of Tb3+ ions in thin films on the deposition conditions♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1335-1338 (2009)