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Deposition of chromium oxide thin films with large thermoelectromotive force coefficient by reactive pulsed laser ablation

A. P. CARICATO1, A. LUCHES1,* , M. MARTINO1, D. VALERINI1, Y. V. KUDRYAVTSEV2, A. M. KORDUBAN2, S. A. MULENKO2, N. T. GORBACHUK3

Affiliation

  1. University of Salento, Department of Physics, 73100 Lecce, Italy
  2. Institute for Metal Physics, NAS of Ukraine, 03142, Kiev-142, Ukraine
  3. Kiev State University of Technology and Design, 03011, Kiev-11, Ukraine.

Abstract

Thin films of chromium oxides were deposited on Si substrates by KrF laser ablation of a chromium target in O2 atmosphere (0.05-5.0 Pa). Films exhibit semiconducting properties with band gap increasing (0.32-0.71 eV) with increasing pressure from 0.05 to 1.0 Pa. The largest values of the thermoelectromotive force coefficient S (∼3.5-4.5 mV/K) were measured in the temperature range 270-290 K for the film deposited at 1.0 Pa. The S coefficient decreases in the same temperature range for the film deposited at lower oxygen pressures..

Keywords

Chromium oxides, Reactive pulsed laser deposition, Nanometric films, Thermo-sensors.

Submitted at: June 21, 2009
Accepted at: Feb. 27, 2010

Citation

A. P. CARICATO, A. LUCHES, M. MARTINO, D. VALERINI, Y. V. KUDRYAVTSEV, A. M. KORDUBAN, S. A. MULENKO, N. T. GORBACHUK, Deposition of chromium oxide thin films with large thermoelectromotive force coefficient by reactive pulsed laser ablation, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 427-431 (2010)