DEEPAK R. PATIL^1,* , LALIT S. PATIL¹, JASPAL P. BANGE¹, D. K. GAUTAM¹

Abstract

Titanium dioxide (TiO2) thin films were deposited on quartz substrates by atmospheric pressure chemical vapor deposition (APCVD) using titanium tetraisopropoxide (TTIP) at 250 - 450°C. The effects of deposition temperature on the properties of TiO2 films were investigated. X-ray diffraction (XRD) shows that films deposited at deposition temperature less than 450°C have anatase TiO2 phase. Mix phase of anatase and rutile appears at deposition temperature 450°C. It is reported that, crystalline orientation of the TiO2 film greatly depends on the deposition temperature. All the films have a preferred orientation of (101) plane of anatase with highest orientation factor 0.51 at 350°C. Crystallinity of the film increases with increase in the deposition temperature. Minimum crystallite size of 29.8 nm at 250°C has been estimated using Scherrer’s formula. Energy dispersive spectroscopy (EDAX) measurement indicated the presence of Ti and O with no impurities. The results of scanning electron microscopy (SEM) show crack-free, uniform and dense films with slight increase in surface roughness with increasing deposition temperature. TiO2 films with good transmittance in the range of ~ 56% to ~87% were successfully deposited on quartz substrate by APCVD using TTIP..

Keywords

Titanium dioxide (TiO2), Thin films, Crystalline orientation, Optical transmittance.

Submitted at: Dec. 19, 2007
Accepted at: Dec. 10, 2008

Citation

DEEPAK R. PATIL, LALIT S. PATIL, JASPAL P. BANGE, D. K. GAUTAM, Deposition of oriented nanocrystalline TiO2 thin films, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 12, pp. 3251-3256 (2008)

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