ARITRA ACHARYYA^1,* , J. P. BANERJEE¹

Abstract

In this paper the electron and hole dominated photocurrent sensitivity of Double-Drift Region (DDR), p+ -p-n-n+ structured 4H-SiC Reach-through Avalanche Photodiodes (RAPDs) has been investigated for visible-blind or near visible blind UltraViolet (UV) sensing. The photo responsitivity and optical gain of the device are obtained by a novel modeling and simulation technique developed by the authors within the wavelength range of 210-350 nm. Two optical illumination configurations of the device such as Top Mounted (TM) and Flip Chip (FC) are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents respectively. Simulation results show that at the wavelength of 260 nm the peak unity gain responsivity and corresponding optical gain are 131 mA/W and 262 respectively for hole dominated photocurrent (i.e in FC structure) while those are 116 mA/W and 208 respectively for electron dominated photocurrent (i.e. in TM structure). Thus better opto-electric performance of 4H-SiC RAPDS can be achieved when the photocurrent is made hole dominated by allowing the light to be incident on the n+ -layer instead of the p+ -layer of the device..

Keywords

4H-SiC Avalanche photodiodes, Double-Drift Region, UV sensor, Electron and hole dominated photocurrents.

Submitted at: May 5, 2012
Accepted at: July 19, 2012

Citation

ARITRA ACHARYYA, J. P. BANERJEE, Design and simulation of silicon carbide poly-type double-drift region avalanche photodiodes for UV sensing, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 7-8, pp. 630-639 (2012)

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