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Design of photonic band gap in one-dimensional SiO2/a-Si photonic crystals

SAHAR A. EL-NAGGAR1,* , NADIA H. RAFAT1, SAMIA I. MOSTAFA1

Affiliation

  1. Dept. of Engineering Math. and Physics, Faculty of Engineering, Cairo University, Giza, Egypt

Abstract

We theoretically study one dimensional binary SiO2/a-Si photonic crystals taking into consideration the dissipative nature of amorphous Si. We suggest a method namely; “modified thickness” to control the band gaps central frequencies by gradually changing the width of the alternating layers. We calculate the reflectance, transmittance and absorbance of light based on the transfer matrix method. Calculations show that photonic band gaps can occur at the suggested central frequency and its multiples. We discuss the limitations on the choice of the first central band gap frequency, thickness of the a-Si layers and number of periods..

Keywords

Photonic crystals; one-dimensional; Modified structure; Amorphous Si, Silicon Dioxide.

Submitted at: May 5, 2011
Accepted at: July 25, 2011

Citation

SAHAR A. EL-NAGGAR, NADIA H. RAFAT, SAMIA I. MOSTAFA, Design of photonic band gap in one-dimensional SiO2/a-Si photonic crystals, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 7, pp. 781-785 (2011)