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AROKIYADOSS RAYERFRANCIS1, P. BALAJI BHARGAV1,* , K. GANESH KUMAR1, NAFIS AHMED1, C. BALAJI1
- SN Research Centre, Sri Sivasubramaniya NadarCollege of Engineering, Kalavakkam –603110, India
Effect of substrate temperature and RF plasma power on the physical and optoelectronic properties of the RF magnetron sputtered GZO thin films is studied using suitable characterization techniques.80% transmission is observed in the visible region and sheet resistance of the film observed to decrease from 2333.0 ohm/γto 17.4ohm/γ with increase in substrate temperature from room temperature to 250°Cat 100 W power. Increasing power to 140 W resulted in the film with lowest sheet resistance of 6.2 ohm/sheet and conductivity of 1.23×1003S/cm at 250°C substrate temperature.The potential of GZO as TCE is evaluated using FOM calculations..
GZO, XRD, FESEM, XPS ,Optoelectronic properties, FOM.
Submitted at: Aug. 9, 2020
Accepted at: June 11, 2021
AROKIYADOSS RAYERFRANCIS, P. BALAJI BHARGAV, K. GANESH KUMAR, NAFIS AHMED, C. BALAJI, Detailed investigations on the effect of temperature and RF power on the optoelectronic properties of gallium doped zinc oxide thin films suitable for transparent conducting electrode applications, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 5-6, pp. 275-284 (2021)
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