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Determination of GaAs MESFETs self heating temperature via output conductance frequency dispersion

Z. HADJOUB1, F. Z. KHELIFATI1, D. NEBTI1, A. GUERAOUI1, A. DOGHMANE1,*

Affiliation

  1. Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, BP 12, Annaba, DZ-23000, Algérie.

Abstract

In this paper, the output conductance frequency dispersion, gd, of GaAs MESFET is measured and analyzed in a large frequency range [10 Hz - 105 Hz]. The investigation was carried in the saturation regime for constant drain-source voltage, Vds = 1 V, and at different negative values of gate-source voltage (- 0.6 V ≤ Vgs ≤ - 0.2 V). Moreover, a theoretical study of the frequency dispersion of gd was carried out under the same experimental conditions. From the comparison between theoretical and experimental results we were able to determine the self heating temperature of the operated device at different gate-source voltages. It was found that this temperature decreases linearly with increasing |Vgs| for which an analytical formula of the form T(K) = T0 - βVgs was determined..

Keywords

GaAs MESFET, output conductance, frequency dispersion, self heating..

Submitted at: March 18, 2013
Accepted at: Sept. 18, 2013

Citation

Z. HADJOUB, F. Z. KHELIFATI, D. NEBTI, A. GUERAOUI, A. DOGHMANE, Determination of GaAs MESFETs self heating temperature via output conductance frequency dispersion, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 9-10, pp. 1131-1135 (2013)