"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Ramanscattering measurements

ENGIN TIRAS1,*

Affiliation

  1. Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470 Eskisehir, Turkey

Abstract

The electron effective mass in AlGaN/AlN/GaN heterostructure grown by the metalorganic chemical vapor deposition (MOCVD) technique was determined from the phonon–plasmon coupled-mode line-shape analysis of vibrational spectroscopy measurements. The vibrational properties of AlGaN/AlN/GaN heterostructures were studied using Raman scattering spectroscopy at room temperature. 532 nm (2.33 eV) was used as the excitations in the Raman scattering measurement. The effective mass obtained from the Raman scattering spectroscopy is in good agreement with the current results in the literature..

Keywords

GaN heterostructure, Raman spectra, Electron effective mass, Phonon–plasmon coupled-mode.

Submitted at: May 2, 2012
Accepted at: Sept. 20, 2012

Citation

ENGIN TIRAS, Determination of the electron effective mass of 2D electrons in AlGaN/AlN/GaN heterostructure by Ramanscattering measurements, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 9-10, pp. 787-791 (2012)