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Direct surface relief formation in As0.2Se0.8 layers

M. TRUNOV1, P. LYTVYN2, V. TAKATS3, I. CHARNOVICH3, S. KOKENYESI3,*

Affiliation

  1. Uzhgorod National University, Uzhgorod, Ukraine
  2. V.Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine
  3. University of Debrecen , Debrecen, Hungary

Abstract

The process of light-stimulated periodic surface relief formation in As0.2Se0.8 layers was investigated by in situ AFM depth profiling and compared with data on diffraction efficiency η of similar holographic gratings, measured in a reflection mode. It was discovered, that the time (exposure) dependence of the surface deformation ∆d has at least two components, which correspond to the stable sinusoidal relief formation up to the giant, ∆d/d >10% changes in this best composition from As-Se system. It is assumed that the surface relief formation is connected with induced volume expansion (up to 1%) as well as with a lateral mass transport. A small dynamical component of η appears when the light is switched on. Most probably it depends on the charge carrier generation and corresponding changes of the refraction index..

Keywords

As- Se, Surface relief, AFM, Volume Expansion.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

M. TRUNOV, P. LYTVYN, V. TAKATS, I. CHARNOVICH, S. KOKENYESI, Direct surface relief formation in As0.2Se0.8 layers, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1959-1962 (2009)