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Effect of annealing temperature on the structural and opto-electrical properties of TiO2 thin films on AZO glass substrates by magnetron sputtering

XIAOJING WANG1,2,* , SHENGXIANG WANG1,2, DENGYU ZHU1,2, XIAOLI HUANG3

Affiliation

  1. School of electronic and electrical engineering, Wuhan Textile University, Wuhan 430074, China
  2. Hubei Engineering and Technology Research Center for Functional Fiber Fabrication and Testing, Wuhan Textile University, Wuhan 430074, China
  3. Hubei Photovoltaic Engineering Technology Research Center, Wuhan 430074, China

Abstract

TiO2 thin films were prepared on the AZO glass substrates by magnetron sputtering. The effect of annealing temperature on the structural、optical and electrical properties of TiO2 thin films was investigated. The results show that the structures of TiO2 thin films are closely related to annealing temperatures. The TiO2 thin film annealed at 400°C is amorphous; the anatase TiO2 is obtained by annealing at 500℃, whereas a rutile and anatase polymorph of TiO2 is obtained when the TiO2 thin film is annealed at 600°C The grain of TiO2 thin film annealed at 600°C is spherical and the grain sizes are tens of nanometers. The optical and electrical properties of TiO2 thin films on AZO glass substrates get worse than the AZO glass itself. The average transmittance of TiO2 thin films annealed at 400°C, 500°C and 600°C is about 74.4%, 69.1% and 71.8% in the range of 400-800 nm. The sheet resistances of TiO2 thin films on AZO substrates annealed at 400°C, 500°C and 600°C are about 45Ω/□, 36Ω/□ and 23Ω/□ respectively..

Keywords

TiO2, Thin films, Structures, Optical and electrical properties, Sputtering.

Submitted at: April 19, 2023
Accepted at: Nov. 24, 2023

Citation

XIAOJING WANG, SHENGXIANG WANG, DENGYU ZHU, XIAOLI HUANG, Effect of annealing temperature on the structural and opto-electrical properties of TiO2 thin films on AZO glass substrates by magnetron sputtering, Journal of Optoelectronics and Advanced Materials Vol. 25, Iss. 11-12, pp. 594-598 (2023)