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I agree, do not show this message again.Effect of Bi addition on dc, ac conductivity and dielectric properties of Te15(Se100-xBix)85 glassy alloys
KAMESHWAR KUMAR1,* , S.C. KATYAL2, PANKAJ SHARMA3, NAGESH THAKUR1
Affiliation
- Department of Physics, H.P. University, Shimla, 171005, India
- Department of Physics, Jaypee Institute of Information Technology, Noida, UP, India
- Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, H.P. (173215) India
Abstract
The present paper reports the dc, ac conductivity and dielectric properties viz. dielectric constant and dielectric loss of Te15(Se100-xBix)85 (x=0, 1, 2, 3, 4 at.%) glassy alloys at room temperature. The dc conductivity is calculated from the I-V characteristics curves of the pellets of bulk samples prepared by melt quenching technique. The samples obey Ohm’s law in the lower (0-25V) voltage range whereas the behaviour in the higher (25-100V) voltage range is non-ohmic. The experimental results indicate that the conduction mechanism in these samples in the higher voltage range is Poole-Frenkel type. The increase in dc conductivity is probably due to Se-Bi bond concentration in the Se-Te-Bi glasses. The experimental results indicate that ac conductivity and the dielectric properties of the bulk samples are frequency dependent. The ac conductivity is found to obey the s law. This increase in ac conductivity is probably due to relaxation caused by the motion of electrons or atoms. The ac conductivity is further found to increase with Bi content. The dielectric constant and dielectric loss are found to decrease with frequency and increase with Bi content..
Keywords
Chalcogenide glasses, ac conductivity, Hopping, localized states, Poole-Frenkel conduction.
Submitted at: March 13, 2011
Accepted at: April 11, 2011
Citation
KAMESHWAR KUMAR, S.C. KATYAL, PANKAJ SHARMA, NAGESH THAKUR, Effect of Bi addition on dc, ac conductivity and dielectric properties of Te15(Se100-xBix)85 glassy alloys, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 4, pp. 371-376 (2011)
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