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Effect of Bi substitution on phase transformation studies for Ge22Sb22Te56 thin films

J. KUMAR1,* , R. THANGARAJ2, T. STEPHEN SATHIARAJ3

Affiliation

  1. Department of Physics, Arni University, Kangra, Himachal Pradesh, India
  2. Department of Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
  3. Department of Physics, University of Botswana, Botswana

Abstract

The effect of Bi substitution on phase transformation in Ge22Sb22Te56 (GST) chalcogenide system has been studied. Partial substitution of Bi upto 2 at% has been found to increase the phase transformation temperature of the GST. On further substitution of Bi (i.e. ~4 and 6 at %) the films were found to exhibit increased room temperature conductivity. Optical study shows the partial decrease in bandgap for Ge22Sb20Bi2Te56 composition in comparison to pure GST. XRD investigation of annealed samples reveals that Bi substitution retains NaCl type crystalline structure of GST..

Keywords

Ge-Sb-Te, Thin film, Bi substitution.

Submitted at: May 26, 2011
Accepted at: Sept. 15, 2011

Citation

J. KUMAR, R. THANGARAJ, T. STEPHEN SATHIARAJ, Effect of Bi substitution on phase transformation studies for Ge22Sb22Te56 thin films, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 9, pp. 1082-1085 (2011)