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Effect of film thickness on physical properties of DC reactive magnetron sputtered Cr doped CdO thin fil

B. HYMAVATHI1,* , B. RAJESH KUMAR2, T. SUBBA RAO1

Affiliation

  1. Materials Research Lab, Department of Physics, Sri Krishnadevarya University, Anantapuramu-515003, A.P, India
  2. Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam-530045, A.P, India

Abstract

Chromium doped CdO thin films have been prepared on glass substrates by DC reactive magnetron sputtering method. The prepared thin films have thickness varying from 250 to 400 nm and good adherence to the glass substrate. A systematic study has been made on structural, electrical and optical properties of Cr doped CdO thin films. XRD analysis showed that Cr doped CdO thin films exhibit cubic crystal structure with (2 0 0) preferred orientation. The electrical resistivity of the films decreases from 5.88 x 10-4 to 2.82 x 10-4 Ω.cm with the increase of film thickness. The average transmittance of Cr doped CdO films in the visible region was found to be in the range of 72-88% and the transmittance decreases with the increase of film thickness from 250 to 400 nm. The optical band gap value varies from 2.88 to 2.78 eV with increasing film thickness from 250 to 400 nm. The decrease of band gap with increase of film thickness could be due to the increase of density of localized states in the conduction band..

Keywords

Thin films, DC reactive magnetron sputtering, Structural properties, Electrical properties, Optical transmittance.

Submitted at: July 18, 2014
Accepted at: Jan. 21, 2015

Citation

B. HYMAVATHI, B. RAJESH KUMAR, T. SUBBA RAO, Effect of film thickness on physical properties of DC reactive magnetron sputtered Cr doped CdO thin fil, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 1-2, pp. 160-164 (2015)