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Effect of growth conditions on the physical properties of the sulfosalt SnSb2S4 thin films deposited by the thermal vacuum evaporation technique

A. GASSOUMI1,* , M.KANZARI1

Affiliation

  1. Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs – ENIT- Tunis El Manar University, BP 37, Le belvédère 1002-Tunis, Tunisie

Abstract

The initial ingot of the SnSb2S4 material was prepared by the horizontal Bridgman method. X-rays diffraction analysis of the powder showed that only homogenous SnSb2S4 phase is present in the ingot. SnSb2S4 thin films were deposited on heated glass substrates by a thermal vacuum evaporation of the crushed powder from the ingot. The substrate temperatures (Ts) were varied in the range 80-240 °C with a step of 40 °C. Here, we investigate the effect of both substrate temperature (Ts) and annealing process on the structural, optical and electrical properties of these films. As the substrate temperature increases and, after annealing under air atmosphere, the average grain size increases from 240 to 420 Å. The switching phenomena are also discussed on the basis of thermally induced transformations..

Keywords

SnSb2S4 thin films, structural properties, morphological properties, optical properties, electrical properties..

Submitted at: Jan. 19, 2012
Accepted at: April 11, 2012

Citation

A. GASSOUMI, M.KANZARI, Effect of growth conditions on the physical properties of the sulfosalt SnSb2S4 thin films deposited by the thermal vacuum evaporation technique, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 3-4, pp. 272-276 (2012)