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Effect of hydrogen on electrical properties of ZnTe/Mn multilayer diluted magnetic semiconductor thin films

S. P. NEHRA1,* , M. SINGH1

Affiliation

  1. Thin Films and Membrane Science Laboratory, Department of Physics, University of Rajasthan, Jaipur -302004, India

Abstract

In this article we have reported the role of hydrogen on ZnTe/Mn multilayer diluted magnetic semiconductor thin films grown by thermal evaporation method at pressure of 10-5 torr on simple as well as indium-tin-oxide (ITO) coated conducting glass substrates at room temperature. These samples have been vacuum annealed at constant temperature 400 K for one hour at base pressure of 10-5 torr. As deposited and vacuum thermal annealed samples have been separately hydrogenated by keeping these in a hydrogenation cell in which hydrogen gas was introduced for half an hour at different pressures (15-45 psi) at room temperature. Structural studies of as deposited and vacuum annealed ZnTe/Mn thin films have been investigated by X-ray diffractomerter. Current – voltage characteristics of both as deposited hydrogenated and vacuum annealed hydrogenated metal-semiconductor ZnTe/Mn thin films have been studied to see the role of hydrogenation. The surface topography of as deposited and vacuum annealed samples was confirmed by optical microscopy. This study confirms the formation of DMS thin films structure, uniform deposition, mixing and hydrogenation effect on electrical properties of ZnTe/Mn DMS thin films..

Keywords

MLs DMS thin films, Hydrogenation, VTA, XRD, I-V characteristics and Surface topography..

Submitted at: April 1, 2010
Accepted at: May 26, 2010

Citation

S. P. NEHRA, M. SINGH, Effect of hydrogen on electrical properties of ZnTe/Mn multilayer diluted magnetic semiconductor thin films, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 5, pp. 1125-1128 (2010)