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Effect of process parameters on RF magnetron sputtered hydrogenated amorphous silicon thin films

SUTAPA BADYAKAR1, G. MOHAN RAO2, CHANDASREE DAS1,*

Affiliation

  1. Department of Electrical and Electronics Engineering, BMS College of Engineering, Bangalore, India
  2. Research Cell, RGUKT (AP-IIIT), Nuzvid, India

Abstract

Characteristics of a-Si:H films deposited by RF magnetron sputtering is investigated in relation to variation in deposition parameter. The deposition rate reduces with substrate bias and hydrogen content, but increases with higher power and temperature. The hydrogen content rises with increased power, bias, and hydrogen flow, but falls with higher temperature. The bandgap widens with bias and hydrogen content but narrows with power and temperature. The hydrogen content can vary from 1.57 at.% to 10.3 at.%, and the bandgap can be changed from 1.2 eV to 1.7 eV. Despite being porous, thin films formed at high temperature shows higher order..

Keywords

Thin film, a-Si:H, Optical bandgap, RF magnetron sputtering, FTIR.

Submitted at: May 3, 2023
Accepted at: April 10, 2024

Citation

SUTAPA BADYAKAR, G. MOHAN RAO, CHANDASREE DAS, Effect of process parameters on RF magnetron sputtered hydrogenated amorphous silicon thin films, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 3-4, pp. 135-142 (2024)