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Effect of rinsing temperature on electrical characteristics of ZnO TFTs built using successive ionic layer adsorption and reaction

P.-Y. LEE1, S.-P. CHANG1,* , H.-H. LIN1, S.-J. CHANG1

Affiliation

  1. Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan

Abstract

In this study, the effects of ethylene glycol treatment temperature on the transfer characteristics of ZnO thin film transistors (TFTs), constructed using successive ionic layer adsorption and reaction (SILAR), were investigated. Under hightemperature solution treatments, the TFT device demonstrated the typical positive shift in threshold voltage (ΔVth). The shifting phenomenon results from lower oxygen vacancies attributable to Zn(OH)2 in the films following a rise in the treatment temperature. However, at temperatures higher than 145oC, particle mobility tends be significantly reduced due to the shedding of ZnO from the surface. As a result, the influence of treatment temperature on SILAR is an essential topic of study..

Keywords

Zinc oxide, Thin film transistor, Successive ionic layer adsorption and reaction, Temperature treatment.

Submitted at: March 19, 2014
Accepted at: Jan. 21, 2015

Citation

P.-Y. LEE, S.-P. CHANG, H.-H. LIN, S.-J. CHANG, Effect of rinsing temperature on electrical characteristics of ZnO TFTs built using successive ionic layer adsorption and reaction, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 1-2, pp. 133-138 (2015)