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Effect of substrate temperature on structural properties of thermally evaporated ZnSe thin films

SUMBIT CHALIHA1,* , M. N. BORAH2, P. C. SARMAH3, A. RAHMAN4

Affiliation

  1. Dept. of Physics, Bahona College, Jorhat-785101, India
  2. Dept. of Physics, D. R. College, Golaghat-785621, India
  3. Electronics Division, Regional Research Laboratory, Jorhat-785006, India
  4. Dept. of Physics, Gauhati University, Guwahati-7810014, India

Abstract

The ZnSe, a wide band gap semiconductor has high potential for application in optoelectronic applications. The structural parameters of a thin film semiconductor largely depend on the preparation method and condition. Transparent ZnSe thin films of thicknesses from 2000 Å to 4500 Å have been prepared by thermal evaporation method on chemically cleaned glass substrates at different substrate temperatures from 300K to 573K. The film structure was studied by X-ray diffraction technique and different micro structural parameters were determined from it. The ZnSe films prepared at higher substrate temperature have been polycrystalline in nature and have a cubic (zinc-blende) structure. The average grain size and average internal strain of these films were calculated from the broadening of the XRD line spectra by plotting Williamson and Hall plots. The grain size of the polycrystalline ZnSe film was found to increase from 160 Å to 454 Å with increase of substrate temperature from 373K to 573K. The internal strain and dislocation density of these films were found to decrease with increase of substrate temperature and also with thickness..

Keywords

Polycrystalline thin film, ZnSe, Substrate temperature, Structural parameters.

Submitted at: Jan. 28, 2008
Accepted at: Feb. 18, 2008

Citation

SUMBIT CHALIHA, M. N. BORAH, P. C. SARMAH, A. RAHMAN, Effect of substrate temperature on structural properties of thermally evaporated ZnSe thin films, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 2, pp. 427-433 (2008)