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Effect of swift heavy ion irradiation on dye doped thiourea -TGS crystals for IR detector and laser applications



  1. Department of Physics, SKP Engineering College, Tiruvannamamalai, Tamil Nadu, India
  2. Department of physics,Rjalakshmi Engineering College,Thandlum,Chennai,Tmail nadu,India
  3. P. G &Research Department of Physics, Thiru. A. Govindasamy Government Arts College, Tindivanam-604 002, Tamil Nadu, India
  4. Department of Physics, Periyar University, Salem-636 011, Tamil Nadu, India


Triglycine sulphate (TGS) crystals were grown by slow evaporation process. The stability of TGS single crystal was improved by doping organic dyes. The structural, optical properties, pyroelectric properties and dielectric properties of the doped crystals were analyzed. The FTIR spectra of all grown crystals have been recorded in the range of 400 - 4000 cm–1 using Bruker FT-IR 8400 spectrophotometer by KBr pellet technique. To determine the lattice parameters, powder X-ray diffraction analysis was performed by X-ray diffractometer system with Cu-Kα (λ = 1.54178Å) radiation at room temperature with an operating voltage 40 kV and the tube current was 30 mA. In the present work, optical transmission and absorption spectra were recorded by Systronics UV-Double beam spectrometer in the wavelength range 190 to 1100 nm. The results for doped TGS crystal are compared with the results of the pure TGS crystals. The doped crystals show good second harmonic generation efficiency. The dopants increase the hardness value of the material, which also depends on the concentration of the dopants. Dye doping improves the Nonlinear Optical properties of the grown crystals. Results of the growth kinetics of Thiourea crystals in the presence of impurities are also discussed..


FTIR.UV, TGA-DTA studies.

Submitted at: Dec. 31, 2014
Accepted at: Feb. 10, 2016


D. NARAYANASAMY, K.SAHADEVA, B.LATHA, P.KUMARESAN, P. M. ANBARASAN, Effect of swift heavy ion irradiation on dye doped thiourea -TGS crystals for IR detector and laser applications, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 1-2, pp. 70-76 (2016)