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I agree, do not show this message again.Effect of the electric field and effective temperature on the mobility in disordered organic semiconductors
L. G. WANG1,* , S. LIU1, M. L. LIU1,* , L. ZHANG1
Affiliation
- School of Electrical Engineering and Automation, Henan Key Laboratory of Intelligent Detection and Control of Coal Mine Equipment, Henan Polytechnic University, Jiaozuo, 454003, People’s Republic of C
Abstract
The theoretical description of the effect of the electric field and effective temperature on the mobility is yet a matter of controversy related to the charge transport in disordered organic semiconductors. In this paper, a systematic study of the hole transport in blue-emitting polymers as poly(9,9-dioctylfluorene) (PFO) has been performed. From an analysis of the layer thickness and temperature dependent current density-voltage characteristics of the PFO hole-only devices, it is found that consistent descriptions with equal quality are obtained by using the extended Gaussian disorder model (EGDM), extended correlated disorder model (ECDM), and effective temperature extended Gaussian disorder model (ET-EGDM). The extracted values of the width of the Gaussian density of states from the three models are rather similar and observed to fall in the range of typical values. However, the extracted values of average intersite distance from the three models are quite different. The value of from the ET-EGDM is very close to the typical values, and is obviously smaller than that from the EGDM and is obviously higher than that from the ECDM, indicating that the ET-EGDM provides a more appropriate description of the electric field dependence of the mobility than the EGDM and ECDM..
Keywords
Charge transport, Mobility, Electric field, Effective temperature, Disordered organic semiconductors.
Submitted at: March 8, 2025
Accepted at: Aug. 5, 2025
Citation
L. G. WANG, S. LIU, M. L. LIU, L. ZHANG, Effect of the electric field and effective temperature on the mobility in disordered organic semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 27, Iss. 7-8, pp. 310-317 (2025)