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Effect of thermal annealing on the band gap and optical properties of chemical bath deposited PbS-CuS thin films

P. U. ASOGWA1, S. C. EZUGWU1,* , F. I. EZEMA1, A. B. C. EKWEALOR1, B. A. EZEKOYE1, R. U. OSUJI1

Affiliation

  1. Department of Physics and Astronomy, University of Nigeria, Nsukka, Nigeria

Abstract

Thin films of PbS-CuS have been grown on glass substrate by chemical bath deposition technique at room temperature. The films were annealed between 423K and 623K. The structure of the films was studied by x-ray diffraction measurement. UV-VIS spectrophotometric measurement showes a direct allowed band gap lying in the range 2.2 – 2.5eV for the annealed films and 1.7eV for the as-deposited film. The band gap increases with increasing annealing temperature..

Keywords

Band-gap, Optical properties, Thermal annealing.

Submitted at: June 4, 2009
Accepted at: July 23, 2009

Citation

P. U. ASOGWA, S. C. EZUGWU, F. I. EZEMA, A. B. C. EKWEALOR, B. A. EZEKOYE, R. U. OSUJI, Effect of thermal annealing on the band gap and optical properties of chemical bath deposited PbS-CuS thin films, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 7, pp. 940-944 (2009)