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Effect of two n-electron blocking layers on internal quantum efficiency droop of InGaN/GaN multi-quantum well blue light-emitting diode

N. KUMAR ROHILA1,* , S. SINGH1, S. PAL1, C. DHANAVANTRI1

Affiliation

  1. Optoelectronics Devices Group, Central Electronics Engineering Research Institute(CEERI), Council of Scientific &Industrial Research, India. Pilani-333031, India

Abstract

We have simulated the effect of two n-electron blocking layers with varied aluminum composition in AlGaN. Usual 20nm n-AlGaN electron blocking layer was replaced with two AlGaN layers with varied Al composition..

Keywords

Light-emitting diodes (LEDs), Multi Quantum Well (MQW), efficiency droop, Electron Blocking Layer (EBL), Internal quantum efficiency (IQE).

Submitted at: May 20, 2010
Accepted at: June 16, 2010

Citation

N. KUMAR ROHILA, S. SINGH, S. PAL, C. DHANAVANTRI, Effect of two n-electron blocking layers on internal quantum efficiency droop of InGaN/GaN multi-quantum well blue light-emitting diode, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 6, pp. 1286-1288 (2010)