"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Electrical and dielectric properties of As-Se glasses doped with uranium

V. TRNOVCOVÁ1,* , I. FURÁR1

Affiliation

  1. Institute of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, 91724 Trnava, Slovakia

Abstract

Influence of uranium, added in metallic form, on the density, glass transition temperature, ac and dc conductivities, and static permittivity of vitreous As2Se3, As2Se7.9, and Se is investigated. Concentration and temperature dependences of the physical properties are studied over the whole glass-forming region. In glassy As2Se3, heavy metals are usually incorporated as 4-fold coordinated cations. Therefore, the concentration dependence of the electrical conductivity goes through a minimum. At high concentrations of U (≥0.5 mol%), high conductivities are observed. A distinct minimum of both the static permittivity (at 0.1 mol% U, it decreases by 25 %) and dc conductivity (at 0.2 mol% U, it decreases by 10-3 times), at low concentrations of U, reflects an extraordinary electrical activity of this impurity in vitreous As2Se3. Enlargement of glass forming regions in As-Se-U system with increasing Se:As ratio was not confirmed..

Keywords

Chalcogenide glasses, As2Se3; As2Se7.9; Se, Doping with U, ac conductivity, dc conductivity, density; Tg, Static permittivity.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

V. TRNOVCOVÁ, I. FURÁR, Electrical and dielectric properties of As-Se glasses doped with uranium, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2058-2062 (2009)