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Electrical and infrared characterization of thin SiO2 films deposited by r.f. magnetron sputtering♣

N. NEDEV1,* , E. MANOLOV2, D. NESHEVA2, J. M. TERRAZAS1, B. VALDEZ1, M. A. CURIEL1, R. ZLATEV1

Affiliation

  1. Instituto de Ingenieria,Universidad Autónoma de Baja California, Benito Juárez Blvd., s/n, C.P. 21280, Mexicali, Baja California, México
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

SiO2 films deposited by reactive r.f. magnetron sputtering at two applied powers, 420 and 560 W, and at partial pressure ratios between oxygen and Ar in the range 1 - 0.1 are studied. FTIR spectra show that all films have compositions close to the stoichiometric one. High temperature annealing at 1000o C shifts the band due to the Si-O-Si symmetric stretching vibration to values typical of stoichiometric SiO2. The MOS structures with SiO2 deposited at P = 420 W and a gas pressure ratio R = 1 have lower densities of defects at the SiO2/c-Si interface than those deposited at the same R but at P = 560 W. For both series of samples, a decrease in the oxygen partial pressure leads to an increase in the interface defect density. In all MOS structures, the main component of the current flowing through the oxide at electric fields higher than 4 MV/cm is due to Fowler-Nordheim tunnelling..

Keywords

Sputtered SiO2 films, Electrical properties, IR, EDX, C-V, I-V.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

N. NEDEV, E. MANOLOV, D. NESHEVA, J. M. TERRAZAS, B. VALDEZ, M. A. CURIEL, R. ZLATEV, Electrical and infrared characterization of thin SiO2 films deposited by r.f. magnetron sputtering♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1300-1303 (2009)