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M. A. MOHD SARJIDAN1,* , W. H. ABD. MAJID1,*
- Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia
Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) based vertical organic light-emitting transistors (VOLETs) have been fabricated. The VOLETs were constructed with a bulk layer of indium-tin-oxide (ITO) and poly(2,3- dihydrothieno-1,4-dioxin)–poly(styrenesulfonate) (PEDOT:PSS) as a drain, organic electroluminescent layer of MEH-PPV, an ultra-thin aluminum (Al) as a source, lithium fluoride (LiF) as dielectric and a thick Al as a gate. Electrical and luminescence properties of the devices were investigated. In such VOLETs, the negative bias on the gate electrode has induced a high current density and brighter luminescence, which corresponding to a strong energy band bending in the MEH-PPV layer. Device physics of the fabricated VOLETs were discussed in detail..
VOLETs, MEH-PPV, Output and transfer characteristic, Fowler-Nordheim model, Current and power efficiency.
Submitted at: Sept. 27, 2017
Accepted at: June 7, 2018
M. A. MOHD SARJIDAN, W. H. ABD. MAJID, Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode, Journal of Optoelectronics and Advanced Materials Vol. 20, Iss. 5-6, pp. 285-289 (2018)
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