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Electrical and optical characterization of tellurium free phase-change material

SALEH T. MAHMOUD1,* , N. QAMHIEH1, A. I. AYESH1, H. GHAMLOUCHE2, M. EL-SHAER1

Affiliation

  1. U.A.E. University, Department of Physics,Al-Ain, P.O. Box: 17555, U.A.E.
  2. Department of Physics, American University of Beirut, P.O.Box 11-0236, Beirut, Lebanon

Abstract

In this work we investigate the electrical and optical properties of Ge15Sb85 thin films prepared by a DC sputtering technique. The phase transition of Te-free films was studied using resistance–temperature measurements. The structure and stoichiometery of the films were identified by X-Ray Diffraction (XRD), and Energy Dispersive X-ray analysis (EDX). The electrical properties of Ge15Sb85 films have been investigated using AC conductivity (Impedance spectroscopy). The resistance-temperature measurements reveal that the amorphous-crystalline transition temperature of Ge15Sb85 is around TC = 420 K. The optical energy gap of Ge15Sb85 films has been measured using UV-VIS-IR spectrophotometer. The estimated activation energy and optical gap allocate the Fermi energy level in high density valence band tail states..

Keywords

Chalcogenides, Phase change materials, Impedance spectroscopy, Nonvolatile Memories.

Submitted at: June 2, 2011
Accepted at: Nov. 23, 2011

Citation

SALEH T. MAHMOUD, N. QAMHIEH, A. I. AYESH, H. GHAMLOUCHE, M. EL-SHAER, Electrical and optical characterization of tellurium free phase-change material, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1498-1501 (2011)