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Electrical and optical properties of ITO films grown at room temperature on glass substrates using pulsed electron deposition

SUSHMA KOTRU1,* , MENGWEI CHEN1, HARSHAN V. NAMPOORI1, RACHEL M. FRAZIER2

Affiliation

  1. Department of Electrical and Computer Engineering,University of Alabama, USA
  2. Alabama Innovation and Mentoring of Entrepreneurs, University of Alabama, Tuscaloosa, AL 35487, USA

Abstract

Sn-doped In2O3 (ITO) films ~70nm were deposited on glass substrates using pulsed electron deposition (PED). A series of films were prepared by varying oxygen pressure (3.1 mTorr to 20 mTorr) in growth chamber during deposition and characterized for structural, electrical and optical properties. Resistivity as low as 2.94x10-3 Ω-cm and an average transmittance ~ 80% in the visible spectrum were achieved in films after annealing. As deposited films have a roughness of 2.17 nm and roughness (rms) was seen to increase with increasing oxygen pressure, these values are comparable to films achieved by other methods and better than the roughness of commercially available polycrystalline ITO films indicating that films prepared by PED technique are smoother. The results suggest that PED is a viable technique for exploring ITO films..

Keywords

ITO, PED, Thin Films, Transmission, XPS, Transparent oxides, Transparent conductive oxides.

Submitted at: Aug. 26, 2011
Accepted at: Feb. 20, 2012

Citation

SUSHMA KOTRU, MENGWEI CHEN, HARSHAN V. NAMPOORI, RACHEL M. FRAZIER, Electrical and optical properties of ITO films grown at room temperature on glass substrates using pulsed electron deposition, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 1-2, pp. 106-111 (2012)