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Electrical and photoelectrical characterization of n-ZnSe/p-GaAs devices prepared by Metal Organic Chemical Vapor Deposition(MOCVD)

M. FADEL1, A. A. M. FARAG2,*

Affiliation

  1. Semiconductor Lab,.Physics Deparment,Faulty of Education, Ain Shams University,Roxy,Cairo,Egypt
  2. Thin Film Lab., Physics Deparment,Faulty of Education, Ain Shams University,Roxy,Cairo,Egypt

Abstract

In this work, the electrical characteristics of the n-ZnSe/p-GaAs structure, epitaxially grown by metal organic chemical vapor deposition (MOCVD), were investigated. The dark current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the structure were determined at various temperatures in the range of 298–398 K. The charge transport conduction mechanism in forward biased condition is described by the modified Schockley effect. Some important junction parameters such as series resistance, Rs, shunt resistance , Rsh, ideality factor,n, and barrier height ΦBO , were determined from the analysis of these curves. The ideality factor of the device is higher than unity, suggesting that the device shows a non-ideal behavior due to series resistance and barrier height inhomogeneities. The barrier height values obtained from the I–V and C–V characteristics were compared. It has been observed that the barrier height value obtained from the C–V measurements are higher than that obtained from the I–V measurements at various temperatures. The effect of illumination on the I-V characteristics was studied and the important solar cell parameters were obtained..

Keywords

ZnSe/GaAs, MOCVD, Heterojunction, Photoelectric, Electrical characterization.

Submitted at: Jan. 31, 2009
Accepted at: May 28, 2009

Citation

M. FADEL, A. A. M. FARAG, Electrical and photoelectrical characterization of n-ZnSe/p-GaAs devices prepared by Metal Organic Chemical Vapor Deposition(MOCVD), Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 5, pp. 571-577 (2009)