R. PADMA¹, V. RAJAGOPAL REDDY^1,*

Abstract

The current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-frequency (G-f) characteristics of a fabricated Au/poly(ethylmethacrylate) (PEMA)/n-InP Schottky barrier diode have been investigated at room temperature. The Au/PEMA/n-InP structure exhibits a good rectifying behaviour. The ideality factor and barrier height of Au/PEMA/n-InP structure are found to be 1.24 and 0.74 eV from the forward I-V characteristics, respectively. The PEMA layer increases the effective barrier height of the structure since this layer creates a physical barrier between the Au metal and the n-InP. From the C-V characteristics, the diffusion potential and barrier height values are estimated as 0.757 V and 0.81 eV, respectively. Further, the energy distributions of the interface states and their relaxation times  of the Au/PEMA/n-InP Schottky structure are determined from C-f and G-f characteristics. Experimental results show that both the interface state density Nss and the relaxation time  of the interface states decreased with bias voltage. The frequency dependence of the Rs is attributed to the distribution density of interface states..

Keywords

Au/poly(ethylmethacrylate)/n-InP Schottky diode, Current-voltage characteristics, Capacitance-voltage-frequency, Conductance-frequency, Interface state density, Relaxation time.

Submitted at: Jan. 8, 2014
Accepted at: Sept. 11, 2014

Citation

R. PADMA, V. RAJAGOPAL REDDY, Electrical characteristics and interface states of Au/poly(ethylmethacrylate)/n-InP organic-modified Schottky diode at room temperature, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 9-10, pp. 1031-1036 (2014)

• Download Fulltext
• Downloads: 525 (from 318 distinct Internet Addresses ).

• Scientometry
• Fast publication
• Old Site

• journals@inoe.ro
• (+40) 021-457 57 58
• (+40) 021-457 45 22
• 409 Atomistilor Str.
  077125 Magurele,
  Ilfov, Romania