"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Electrical characteristics and interfacial reactions of rapidly annealed double metal Pd/Ti Schottky structure on n-type InP

M. BHASKAR REDDY1, V. RAJAGOPAL REDDY2,* , D. SUBBA REDDY3, CHEL-JONG CHOI2

Affiliation

  1. Government Degree College, Department of Physics, Puttur-517583 Chittor Dt. A.P., India
  2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Korea.
  3. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India

Abstract

We report on the effect of annealing temperature on electrical, interfacial reactions and surface morphological properties of Pd/Ti Schottky contacts to n-type InP. Measurements showed that the Schottky barrier height of as-deposited Pd/Ti Schottky contact is 0.58 eV (I-V) and 0.79 eV (C-V) respectively. It is observed that the barrier height increases to 0.67 eV (I-V) and 0.87 eV (C-V) for the contact annealed at 250 o C. Experimental results show that after annealing at temperature of 350 o C and 450 o C, the barrier heights decreases to 0.60 eV (I-V), 0.82 eV (C-V) and 0.54 eV (I-V), 0.73 eV (C-V) respectively. From the above observations, the optimum annealing temperature for the Pd/Ti Schottky contact is 250 o C. Based on the AES and XRD analysis, the formation of the indium phases at the Pd/Ti/n-InP interface could be the reason for the increase in the barrier height at annealing temperature 250 o C. Further, the degradation of the barrier heights after annealing at 350 o C and 450 o C may be due to the formation of phosphide phases at the Pd/Ti/n-InP interface. Atomic force microscopy (AFM) result shows that the overall surface morphology of the Pd/Ti Schottky contacts is reasonably smooth..

Keywords

Pd/Ti Schottky layers; Electrical properties; X-ray diffraction; Auger electron spectroscopy.

Submitted at: Aug. 11, 2012
Accepted at: April 11, 2013

Citation

M. BHASKAR REDDY, V. RAJAGOPAL REDDY, D. SUBBA REDDY, CHEL-JONG CHOI, Electrical characteristics and interfacial reactions of rapidly annealed double metal Pd/Ti Schottky structure on n-type InP, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 3-4, pp. 169-175 (2013)