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Electrical characteristics and photoresponse of n-ZnSe/p-GaP heterojunction prepared by metal organic chemical vapor deposition

M. FADEL1, A. A. M. FARAG2,*

Affiliation

  1. Semiconductor lab.,Physics department,faculty of Education,Ain Shams University, Egypt
  2. Thin Film Lab., Physics department,faculty of Education,Ain Shams University, Egypt

Abstract

In this paper, the n-type ZnSe films were grown on p-type GaP single crystalline substrate by metal organic chemical vapor deposition ,MOCVD. The temperature dependence of current–voltage (I–V) characteristics of n-ZnSe/p-GaP heterojunction contacts were measured in the temperature range 300-425 K. These characteristics show rectifying behaviour consistent with a potential barrier formed at the interface. The high values of ideality factor (n) may be ascribed to the presence of an interfacial layer .The density of interface states Nss distribution profile as a function of (Ess-Ev ) was extracted from the forward bias I-V measurements . The photovoltaic parameters such as open circuit voltage and short circuit current were studied as a function of incident light intensity. The photoresponse measurements showed a logarithmic variation of open circuit voltage with the incident light intensity and show an improvement of the ideality factor under effect of illumination..

Keywords

n-ZnSe/p-GaP;MOCVD, Photoresponse.

Submitted at: Oct. 28, 2010
Accepted at: Nov. 25, 2010

Citation

M. FADEL, A. A. M. FARAG, Electrical characteristics and photoresponse of n-ZnSe/p-GaP heterojunction prepared by metal organic chemical vapor deposition, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 12, pp. 2400-2405 (2010)