"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Electrical characteristics of a Schottky device based on maleic anhydride deposited on p-type silicon by spin coating technique

S. BILGE OCAK1,* , A. B. SELÇUK2, G. KAHRAMAN2, A. H. SELÇUK3

Affiliation

  1. Gazi University, Atatürk M.Y.O., Çubuk, Ankara
  2. Sarakoy Nuclear Research and Training Centre, 06983 Saray, Kazan, Ankara, Turkey
  3. Balıkesir Univertsity, Faculty of Engineering, Electrical and Electronics Engineering Department, Turkey

Abstract

Al/Maleic Anhydride (MA)/p-Si metal-polymer-semiconductor (MPS) structures were prepared on p-Si substrate by spin coating and these MPS structures had a good rectifying behavior. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of Al/MA/p-Si structures were investigated in the frequency (f) range of 1kHz-10MHz at room temperature. The parameters of diodes such as ideality factor, series resistance, barrier height and flat band barrier height were calculated from the forward bias I-V characteristics. The investigation of interface states density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics in the MPS structures with thin interfacial insulator layer have been reported in order to explain the electrical characteristics of metal/polymer/semiconductor (MPS) with Maleic anhydride (MA) interface. The values of interface states density Dit and series resistance Rs were calculated from measurements of C and G. The values of interface states density Dit and series resistance Rs were calculated from measurements of C and G. These values of Dit and Rs were responsible for the non-ideal behavior of I-V and C-V characteristics. TheI-V, C-V-f and G-V-f characteristics confirm that the barrier height, Dit and Rs of the diode are shown parameters that strongly dependent on the electrical parameters in the MPS structures..

Keywords

Schottky barrier, Ideality factor, Series resistance, Interfaces, Organic compounds, Electrical properties.

Submitted at: Sept. 5, 2013
Accepted at: July 10, 2014

Citation

S. BILGE OCAK, A. B. SELÇUK, G. KAHRAMAN, A. H. SELÇUK, Electrical characteristics of a Schottky device based on maleic anhydride deposited on p-type silicon by spin coating technique, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 7-8, pp. 956-963 (2014)