Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
A. TURUT1, A. KARABULUT2,* , H. EFEOĞLU3
- Istanbul Medeniyet University, Faculty of Engineering and Natural Sciences, Engineering Physics Department, TR-34730 Istanbul – Turkey
- Sinop University, Faculty of Engineering, Department of Electrical and Electronics Engineering, Sinop-Turkey
- Atatürk University, Faculty of Engineering, Department of Electrical and Electronics Engineering, TR-25240 Erzurum, Turkey
We have prepared the Au/Ti/Al2O3/n-GaAs structures and investigated their current-voltage (I-V) characteristics with the temperature (in 20-320K range) as a parameter, and current-temperature (I-T) characteristics with bias voltage as a parameter. The ultrathin Al2O3 metal-oxide layer on the n-GaAs substrate has been formed by atomic layer deposition (ALD) method. Ti(10nm) rectifying contacts have been fabricated on Al2O3/n-GaAs structure by DC magnetron sputtering. The ideality factor value has remained between 1.10 -1.06 from 130 K to 320 K. The barrier height (BH) value has increased with a slope of = -0.31 meV/K from 320 K to 110 K. Then, it has been seen that the decrease in the BH value from 110 K to 20 K obeys a double Gaussian distribution (GD) of the BHs due to the BH inhomogeneity. The experimental I-T characteristics have been interpreted by plotting the theoretical I-T characteristics with and without the GD based on the TE current theory at each bias voltage. Moreover, the BH values have been also determined from the Richardson curves plotted using the I-T data at each forward and reverse bias voltage. It has been observed that the BH reduction is higher under reverse bias voltage than under forward bias voltage regime due to the barrier inhomogeneity which is not recommended for the Schottky diode being a rectifying device..
Metal/Insulating layer/semiconductor (MIS) structures, Atomic layer deposition (ALD), Inhomogeneous barrier height, GaAs semiconductor, current-voltage of MIS structures.
Submitted at: April 12, 2016
Accepted at: June 7, 2017
A. TURUT, A. KARABULUT, H. EFEOĞLU, Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 5-6, pp. 424-433 (2017)
- Download Fulltext
- Downloads: 85 (from 56 distinct Internet Addresses ).