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Electrical characterization of Au/ZnO/TiO2/n-Si and (Ni/Au)/ZnO/TiO2/n-Si Schottky diodes by using currentvoltage measurements

B. KINACI1,* , T. ASAR1, S.Ş. ÇETIN1, Y. ÖZEN1, K. KIZILKAYA1

Affiliation

  1. Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey Photonics Application and Research Center, Gazi University, 06500, Ankara, Turkey

Abstract

In this study, we fabricated two types Schottky diodes (SDs), Au/ZnO/TiO2/n-Si (MIS-1) and (Ni/Au)/ZnO/TiO2/n-Si (MIS-2), to investigate main electrical parameters such as ideality factor (n), barrier height (Φb), interface states (Nss) and series resistance (Rs). ZnO/TiO2 thin film was deposited on polycrystalline n-type Si substrate using DC magnetron sputtering system. The analysis of current-voltage (I-V) measurements of ZnO/TiO2/n-Si Schottky diodes (SDs) were performed with two different rectifier contacts as Au and Ni/Au at room temperature. The values of n, Φb and Rs were calculated as 1.80, 0.88 eV and 106.12 Ω for MIS-1 and 1.97, 0.82 eV and 50.13 Ω for MIS-2 SDs, respectively, from forward-bias I-V curves. The energy distribution profile of Nss for both SDs was obtained from the forward bias I-V measurements by taking the bias dependence of the effective barrier height (Φe) into account. In addition, the values of Φb and Rs of MIS-1 and MIS-2 SDs were determined using Cheung’s and Norde’s functions and the obtained results have been compared with each other..

Keywords

ZnO; TiO2; DC magnetron sputtering; Current-voltage characteristics, Scothky diodes..

Submitted at: Sept. 3, 2012
Accepted at: Oct. 30, 2012

Citation

B. KINACI, T. ASAR, S.Ş. ÇETIN, Y. ÖZEN, K. KIZILKAYA, Electrical characterization of Au/ZnO/TiO2/n-Si and (Ni/Au)/ZnO/TiO2/n-Si Schottky diodes by using currentvoltage measurements, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 11-12, pp. 959-963 (2012)