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Electrical characterization of GeSe2-Sb2Se3-AgI glasses

D. NESHEVA1,* , B. STEFANOVA1, G. VASSILEV2, V. VASSILEV2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko chaussee blvd., 1784 Sofia, Bulgaria
  2. Dapartment of Non-Ferrous Metals and Semiconductor Technologies, University of Chemical Technology and Metalurgy, 8 Kl. Ohridski blvd., 1756 Sofia, Bulgaria

Abstract

Electrical properties of new (GeSe2)x(Sb2Se3)y(AgI)z chalcohalide glasses with six different compositions and z varying between 5 and 40 mol.% are explored. Current-voltage (I-V) characteristics are measured by applying aluminium or gold contacts in sandwich and planar configuration. The applied dc electric fields are in the range 0.025-1000 V/cm. No significant long term changes of the dark current are observed for most samples with the exception of the glass with the highest molar percent of AgI. The I-V characteristics of the sample with the lowest molar percent of AgI are Ohmic-like (I ~ U) while those of all other samples consist of two parts. At applied fields < 1 V/cm the characteristics are Ohmic-like, while the part at higher fields is described by a power low I ~ Uγ, 1< γ <2. Temperature dependences of the dark current are also measured and thermal activation energies determined for all compositions are in the range 0.33 - 0.46 eV. A power law dependence of the room temperature conductivity on the at. % of the Ag content is obtained. The value of the power low extent depends on the applied voltage. The results obtained are discussed in terms of 3D percolation of Ag ions which is affected by the applied electric field..

Keywords

GeSe2-Sb2Se3-AgI glasses, Current-voltage characteristics, Conductivity mechanism.

Submitted at: July 2, 2010
Accepted at: Sept. 15, 2010

Citation

D. NESHEVA, B. STEFANOVA, G. VASSILEV, V. VASSILEV, Electrical characterization of GeSe2-Sb2Se3-AgI glasses, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 9, pp. 1852-1856 (2010)