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Electrical characterization of n-Si/Copper phthalocyanine based on photodiode

A. A. HENDI1,* , R.H. Al ORAINY1

Affiliation

  1. Physics Department, Sciences Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia

Abstract

The electrical and photovoltaic properties of n-Si/Copper phthalocyanine hybrid heterojunction device have been investigated by current-voltage and capacitance-voltage measurements. The ideality factor of the diode was found to be 2.08, suggesting that the heterojunction diode indicates a non-ideal diode behaviour. At higher voltages, the space charge limited-conduction mechanism is dominant in the diode. The series Rs and shunt resistance Rsh values for the diode were found to be 6.97x104  and 1x108 , respectively. The photocurrent in the reverse direction of the diode increases with illumination intensity. n-Si/Copper phthalocyanine heterojunction diode gives an open-circuit voltage of 0.092 V and a shortcircuit current of 0.08 A at light intensity of 6 mW/cm 2..

Keywords

Photovoltaic device, Heterojunction diode, Organic semiconductors.

Submitted at: Jan. 16, 2014
Accepted at: Sept. 11, 2014

Citation

A. A. HENDI, R.H. Al ORAINY, Electrical characterization of n-Si/Copper phthalocyanine based on photodiode, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 9-10, pp. 1137-1141 (2014)