Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
DONGYUN GUO1,* , LONG LIU1, XINYI LI1, ZHIXIONG HUANG1, LIANMENG ZHANG1, KAZUMI KATO2
- School of Materials Science and Engineering Wuhan University of Technology, Wuhan 430070, China
- National Institute of Advanced Industrial Science and Technology, Tsukuba 305 8560 , Japan
The highly (002) oriented Al doped ZnO (AZO) thin films were prepared by a chemical bath deposition, and the doping sites of Al 3+ ions in ZnO thin films was investigated. All AZO films had high transparency in the visible wavelength range , while they showed poor electrical conducti vity The resistivity of these AZO thin films varied from 1.10×10 2 to 4.64×10 2 Ω·cm. As the AZO thin films were prepared by the chemical bath deposition, the substitution of Al 3+ ions for Zn 2+ ions was quite difficult in the ZnO crystal structure, and then the Al 3+ ions mainly segregated at the grain boundaries, which induced the low electrical conductivity.
Al doped ZnO thin film , C hemical bath deposition (002) orientation, Carrier concentration, C arrier mobility.
Submitted at: March 23, 2019
Accepted at: Feb. 17, 2020
DONGYUN GUO, LONG LIU, XINYI LI, ZHIXIONG HUANG, LIANMENG ZHANG, KAZUMI KATO, Electrical prope r ties and Al doping site analysis of (002) oriented Al doped ZnO th in films prepared by chemical bath deposition, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 1-2, pp. 75-80 (2020)
- Download Fulltext
- Downloads: 1 (from 1 distinct Internet Addresses ).