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DONGYUN GUO1,* , LONG LIU1, XINYI LI1, ZHIXIONG HUANG1, LIANMENG ZHANG1, KAZUMI KATO2
- School of Materials Science and Engineering Wuhan University of Technology, Wuhan 430070, China
- National Institute of Advanced Industrial Science and Technology, Tsukuba 305 8560 , Japan
The highly (002) oriented Al doped ZnO (AZO) thin films were prepared by a chemical bath deposition, and the doping sites of Al 3+ ions in ZnO thin films was investigated. All AZO films had high transparency in the visible wavelength range , while they showed poor electrical conducti vity The resistivity of these AZO thin films varied from 1.10×10 2 to 4.64×10 2 Ω·cm. As the AZO thin films were prepared by the chemical bath deposition, the substitution of Al 3+ ions for Zn 2+ ions was quite difficult in the ZnO crystal structure, and then the Al 3+ ions mainly segregated at the grain boundaries, which induced the low electrical conductivity.
Al doped ZnO thin film , C hemical bath deposition (002) orientation, Carrier concentration, C arrier mobility.
Submitted at: March 23, 2019
Accepted at: Feb. 17, 2020
DONGYUN GUO, LONG LIU, XINYI LI, ZHIXIONG HUANG, LIANMENG ZHANG, KAZUMI KATO, Electrical prope r ties and Al doping site analysis of (002) oriented Al doped ZnO th in films prepared by chemical bath deposition, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 1-2, pp. 75-80 (2020)
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