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P. LAZARENKO1, A. SHERCHENKOV1, S. KOZYUKHIN2,3, A. BABICH1, S. TIMOSHENKOV1, A. SHULIATYEV1, V. KUDOYAROVA4
- National Research University of Electronic Technology, Bld. 1, Shokin Square, Zelenograd, Moscow, 124498, Russia
- Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Pr., 31, Moscow, 119991, Russia
- Department of Chemistry, National Research Tomsk State University, Tomsk, 634050, Russia
- Ioffe Physico-Technical Institute, RAS, Politekhnicheskaya, 26, St-Petersburg, 194021, Russia
Influence of the composition variation along the quasi-binary line GeTe-Sb2Te3 on the transport mechanisms of thin films was investigated. Three regions with different current-voltage dependencies were established. Composition dependence of the energy diagrams was analyzed. Position of the trap levels controlling transport mechanisms, and density of traps were estimated. Obtained results showed that electrical properties of thin films can be sufficiently varied with moving along the quasi-binary line, which is important for the optimization of PCM technology..
Phase change memory, Ge-Sb-Te, Electrical properties, Transport mechanisms.
Submitted at: Nov. 2, 2015
Accepted at: Feb. 10, 2016
P. LAZARENKO, A. SHERCHENKOV, S. KOZYUKHIN, A. BABICH, S. TIMOSHENKOV, A. SHULIATYEV, V. KUDOYAROVA, Electrical properties and transport mechanisms in Ge-Sb-Te thin films, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 1-2, pp. 50-55 (2016)
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