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I agree, do not show this message again.Electrical properties of GeSe2-Sb2Se3-PbTe thin films
B. STEFANOVA1, D. NESHEVA1,* , K. PETKOV2, M. RADONOVA3, G. VASSILEV3, V. VASSILEV3
Affiliation
- Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
- Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl. 109, 1113 Sofia, Bulgaria.
- Dapartment of Non-Ferrous Metals and Semiconductor Technologies, University of Chemical technology and matalurgy, 8 Kl. Ohridski blvd, 1756 Sofia, Bulgaria
Abstract
Thin films from (GeSe2)x(Sb2Se3)y(PbTe)z (x+y+z=100 %) have been prepared by thermal evaporation of preliminary synthesized glassy material. Energy-dispersive X-ray spectroscopy has been applied for determination of the film composition. Temperature measurements of the electrical conductivity in the range 20-110 oC have also been carried out. It has been found that the room temperature dark conductivity varies within six orders of magnitude (10-9-10-3 S/cm) with changing the film composition. It has also been shown that the dark current thermal activation energy does not depend of the applied electric field which implies that electrical polarization does not occur and the activation energy of the dark current indicates the position of the Fermi-level in the gap. A strong decrease of the activation energy has been observed with increasing the molar percentages of both PbTe and Sb2Se3. The comparison of the optical band gap with the doubledark current activation energy has implied that only the films that not contain PbTe are amorphous while all films containing PbTe are nanocrystalline..
Keywords
Thin films, Electrical properties, Computer simulation, Guinness.
Submitted at: Nov. 1, 2011
Accepted at: Nov. 23, 2011
Citation
B. STEFANOVA, D. NESHEVA, K. PETKOV, M. RADONOVA, G. VASSILEV, V. VASSILEV, Electrical properties of GeSe2-Sb2Se3-PbTe thin films, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1454-1457 (2011)
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