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Electrical properties of Langmuir-Blodgett thin films using calixarene molecules

Z. ÖZBEK1, R. ÇAPAN1,* , H. SARI2, T. UZUNOĞLU2, F. DAVIS3

Affiliation

  1. Balıkesir University, Faculty Of Science, Department Of Physics, 10100 Balıkesir, TURKEY
  2. Ankara University, Faculty Of Engineering, Department Of Engineering Physics, 06100 Tandogan, Ankara, TURKEY
  3. Cranfield Health, Cranfield University, MK43 0AL, UK

Abstract

Calix[8]acid/calix[4]amine alternate layer Metal-Langmuir-Blodgett film-Metal (M/LB/M) structures were fabricated onto an aluminized glass substrate. Film deposition results indicated that these molecules are suitable to deposit with a highly ordered alternate layer structure. Studies were made of the nano-layer structures' electrical properties such as I-V and C-f. By analyzing I-V curves and assuming a Schottky conduction mechanism, the barrier height was found to be 0.67 eV..

Keywords

Calixarene, Langmuir-Blodgett thin films, Electrical properties.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

Z. ÖZBEK, R. ÇAPAN, H. SARI, T. UZUNOĞLU, F. DAVIS, Electrical properties of Langmuir-Blodgett thin films using calixarene molecules, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1412-1415 (2009)