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Electron traps studied in AlGaN/GaN HEMT on Si substrate using capacitance deep level transient spectroscopy

H. MOSBAHI1, M. GASSOUMI1,* , M. CHARFEDDINE1, M. A. ZAIDI1, C. GAQUIERE2, H. MAAREF1

Affiliation

  1. Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Avenue de l’Environnement 5000 Monastir, Tunisie.
  2. Institut d’Electronique de Microélectronique et de Nanotechnologie IEMN (TIGER), Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 5965

Abstract

Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon (Si) substrates were characterized by the means Capacitance-Voltage and Deep Level Transient Spectroscopy. DLTS Measurements have revealed four electron traps with the binding energies of 0.08, 0.25, 0.47 and 0.59 eV and capture cross-sections of 2.02x10-18, 1.6x10-16, 1.2x10-12 and 7.02x1013cm2 respectively. The concentrations of the traps were found at around of 1014cm3 . The nature and the localization of the traps have been discussed..

Keywords

AlGaN/GaN, HEMTs, DLTS,C-V, Traps, Deep levels.

Submitted at: Nov. 2, 2010
Accepted at: Nov. 19, 2010

Citation

H. MOSBAHI, M. GASSOUMI, M. CHARFEDDINE, M. A. ZAIDI, C. GAQUIERE, H. MAAREF, Electron traps studied in AlGaN/GaN HEMT on Si substrate using capacitance deep level transient spectroscopy, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 11, pp. 2190-2193 (2010)