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Enhancement of photo induced changes due to plasmon field in amorphous chalcogenide thin film structure

STEPAN CHARNOVYCH1

Affiliation

  1. Department of Experimental Physics, University of Debrecen, Bem sq. 18/a,4026, Debrecen, Hungary

Abstract

Interaction of non-destructive laser light with amorphous chalcogenide semiconductor films results specific structural changes and related effects of optical recording and memory, which in general originate from electron-hole excitations, defect creation or modification and subsequent atomic motions. As far electron processes are sensitive to the electric fields, the light stimulated changes can be influenced by plasmon fields. We have investigated the effect of the plasmon field on the photo-darkening or bleaching and also on induced thickness changes in thin chalcogenide films, specifically in As2S3 and As2Se3 compositions, which are the most known and frequently used for investigations of photoinduced effects. Thin film structures built of gold nanoparticles (GNP) deposited on the silica glass substrate and covered by an amorphous film were used for investigations. Correlation was observed between the surface plasmon resonance in the selected spectral region of illumination of investigated samples and the characteristics of photo-darkening and bleaching, thickness change, which show on the possibility to increase the efficiency of optical recording in chalcogenide films..

Keywords

Thin amorphous chalcogenide films, Photo-induced effects, Gold nanoparticle, Plasmon enhancement.

Submitted at: Oct. 13, 2010
Accepted at: April 11, 2011

Citation

STEPAN CHARNOVYCH, Enhancement of photo induced changes due to plasmon field in amorphous chalcogenide thin film structure, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 4, pp. 412-415 (2011)