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Y. MA1,* , Y. C. CHANG1, J. Z. YIN1
- Jilin University, State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Changchun 130012, China
ZnO thin films have been grown on c-Al2O3 substrates by metal-organic chemical vapor deposition at different oxygen partial pressures. The dependence of the crystallite size and the lattice strain in the ZnO thin films on the oxygen partial pressure are investigated. With increasing the oxygen partial pressure, the crystallite size is found to be reduced and the lattice strain increased by investigating Debye-Scherrer’s (DS) equation and Williamson-Hall (W-H) analysis. XRD peak broadening analysis reveals that the as-grown c-axis oriented ZnO films are polycrystalline with the crystallite size of 23 - 43nm and the microstrain values in the range of 2.4×10-3 - 4.2×10-3. The stress and deformation energy density calculated by W-H anisotropic models become larger as increasing the oxygen pressure. These are closely correlated to the growth mechanism of the ZnO thin films on c-Al2O3 substrates..
ZnO, MOCVD, Strain, Williamson-Hall.
Submitted at: Jan. 7, 2019
Accepted at: Dec. 10, 2019
Y. MA, Y. C. CHANG, J. Z. YIN, Evaluation of lattice strain in ZnO thin films based on Williamson-Hall analysis, Journal of Optoelectronics and Advanced Materials Vol. 21, Iss. 11-12, pp. 702-709 (2019)