Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
A. ARSLAN ALSAÇ1,* , T. SERIN1, Ş. ALTINDAL2, Y. A. KALANDARAGH3,4
- Ankara University, Faculty of Engineers, Department of Engineering Physics , 06900 Ankara, Turkey
- Gazi University, Faculty of Sciences, Department of Physics, 06900 Ankara, Turkey
- Department of Physics, University of Mohaghegh Ardabili, P.O. Box 179, Ardabil, Iran
- Department of Engineering Sciences, Sabalan University of Advanced Technologies (SUAT), Namin, Iran
The I-V characteristics of Au/(PVA-Fe3O4)/n-Si SBDs were measured in wide-temperature (80-320K) to specify the possible conduction-mechanisms (CMs). Structural characterization of (PVA-Fe3O4) interlayer was done using (XRD) which, confirmed that the formation of Fe3O4 nanostructures has spinel cubic-crystal structure and space group. The mean-size of clusters was found as 50-200 nm and nanostructure-size was found less than 20 nm from the SEM images. The forward bias Ln(I)-V characteristics show that barrier-height (BH) increasing with increasing temperature whereas ideality-factor (n) decreases. Such changes in the BH and n with temperature was successfully explained by thermionic-emission theory with Double-Gaussian-distribution (DGD) of the BHs..
Current-voltage-temperature (I-V-T) characteristics, Double Gaussian distribution of barrier heights, Temperature dependence of surface state.
Submitted at: Jan. 12, 2021
Accepted at: Aug. 16, 2021
A. ARSLAN ALSAÇ, T. SERIN, Ş. ALTINDAL, Y. A. KALANDARAGH, Evidences on double Gaussian (DG) distribution of barrier heights in Au/(PVA-Fe3O4)/n-Si Schottky barrier diodes (SBDs) from the current-voltage (I-V) measurements in wide temperature, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 7-8, pp. 339-347 (2021)
- Download Fulltext
- Downloads: 1 (from 1 distinct Internet Addresses ).