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Evolution of surface oxides on GaAs

R. V. GHITA1,*


  1. National Institute of Materials Physics, P.O.Box MG 7, Magurele, Bucharest, ROMANIA


A real GaAs surface is covered with a relatively thick layer (a few nanometers) of native oxide. As2O3, As2O5, and Ga2O3 will form when a clean GaAs surface is exposed to air and light. It was put into evidence the presence of a Ga-As-O precursor oxide in an XPS measurement on native oxide at room temperature. An extended ARXPS study on native oxide on GaAs was performed for native oxides. The influence of thermal treatment on native oxides was put into evidence by an ARXPS study from Room temperature to 7000C. In the thermal evolution of As and Ga oxide is observed the disappearance of As oxide at 4000C and the Ga oxide at 7000C. The spectral data in ARXPS analysis indicated the same evolution for As and Ga oxides..


B2. Semiconducting III-V, A1. Surfaces, A1. Etching, A1. Characterization.

Submitted at: Sept. 28, 2015
Accepted at: Oct. 28, 2015


R. V. GHITA, Evolution of surface oxides on GaAs, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 11-12, pp. 1703-1709 (2015)